FNK N-Channel Enhancement Mode Power
MOSFET
Description
The FNK22001 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
FNK22001
General Features
● VDS =80V,ID =105A RDS(ON) 8mΩ @ VGS=10V
(Typ:6.
3mΩ)
● High density cell design for ultra low Rdson ● Fully characterized avalanche
voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Application
● Automotive applications ● Hard switched and high frequency circuits ● Uninterruptible power supply
Schematic diagram TO-220-3L top view
Mark...