FNK30H160D
FNK N-Channel Enhancement Mode Power
MOSFET
Description
The FNK30H160 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features
● VDS =30V,ID =160A RDS(ON) 2.
4 mΩ @ VGS=10V RDS(ON) 3.
5mΩ @ VGS=4.
5V
● High density cell design for ultra low Rdson ● Fully characterized avalanche
voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Schematic diagram
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
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