FNK N-Channel Enhancement Mode Power
MOSFET
Description
The FNK4610 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
FNK4610
General Features
● VDS = 100V,ID =73A RDS(ON) 12.
2m Ω @ VGS=10V
(Typ:8.
6mΩ)
● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche
voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation
Schematic diagram
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
To-220 Top View
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