FNK N-Channel Enhancement Mode Power
MOSFET
FNK6050
Description
The FNK6050 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Features
● VDS =60V,ID =50A RDS(ON) 20mΩ @ VGS=10V
● High density cell design for ultra low Rdson ● Fully characterized avalanche
voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Schematic diagram
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
TO-220-3L top view
Package Marking ...