FNK60H10
FNK N-Channel Enhancement Mode Power
MOSFET
Description
The FNK60H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
General Feature
● VDS =60V,ID =100A RDS(ON) 6.
5mΩ @ VGS=10V
(Typ:5.
7mΩ)
Schematic diagram
● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized Avalanche
voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
Marking and pin as...