1W PACKAGED POWER PHEMT • FEATURES ♦ 29.
5 dBm Linear Output Power ♦ 18 dB Power Gain at 2 GHz ♦ 10.
5 dB Maximum Stable Gain at 10 GHz ♦ 39 dBm Output IP3 ♦ 45% Power-Added Efficiency at 2 GHz FPD1500P100 • DESCRIPTION AND APPLICATIONS The FPD1500P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.
25 µm by 1500 µm Schottky barrier gate, defined by highresolution stepper-based photolithography.
The recessed and offset Gate structure minimizes parasitics to optimize performance.
The epitaxial structure and processing have been optimized for reliable high-power applications.
The FPD1500P100 also features Si3N4 passivation and is also availab...

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