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Part Number
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FPDA200V |
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Manufacturer
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Filtronic Compound Semiconductors |
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Description
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HIGH PERFORMANCE PHEMT WITH SOURCE VIAS |
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Published
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Apr 1, 2005 |
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Detailed Description
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Preliminary Data Sheet
• FEATURES ♦ 21 dBm Output Power at 1-dB Compression at 18 GHz ♦ 12.5 dB Power Gain at 18 GHz ♦ 5...
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Datasheet
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FPDA200V
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Overview
Preliminary Data Sheet
• FEATURES ♦ 21 dBm Output Power at 1-dB Compression at 18 GHz ♦ 12.
5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency ♦ Source Vias to Backside Metallization
FPDA200V
HIGH PERFORMANCE PHEMT WITH SOURCE VIAS
GATE BOND PAD
DRAIN BOND PAD
DIE SIZE: 15.
6X13.
2 mils (395x335 µm) DIE THICKNESS: 3.
9 mils (100 µm) BONDING PADS: 3.
1X3.
1 mils (80x80 µm)
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DESCRIPTION AND APPLICATIONS The FPDA200V is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.
25 µm by 200 µm Schottky barrier gate.
The recessed “mushroom” gate structure minimizes parasitic gate-s...
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