FQA11N90-F109 — N-Channel QFET®
MOSFET
FQA11N90-F109
N-Channel QFET®
MOSFET
900 V, 11.
4 A, 960 mΩ
Features
• 11.
4 A, 900 V, RDS(on) = 960 mΩ (Max.
) @ VGS = 10 V, ID = 5.
7 A
• Low Gate Charge (Typ.
72 nC) • Low Crss (Typ.
30 pF) • 100% Avalanche Tested • RoHS compliant
Description
This N-Channel enhancement mode power
MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced
MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic ...