FQA28N15 — N-Channel QFET®
MOSFET
FQA28N15
N-Channel QFET®
MOSFET
150 V, 33 A, 90 mΩ
June 2014
Description
Features
This N-Channel enhancement mode power
MOSFET is • 33 A, 150 V, RDS(on) = 90 mΩ (Max.
) @ VGS = 10 V,
produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced
MOSFET
ID = 16.
5 A
technology has been especially tailored to reduce on-state • Low Gate Charge (Typ.
0 nC)
resistance, and to provide superior switching performance and • Low Crss (Typ.
110 pF) high avalanche energy strength.
These devices are suitable
for switched mode power supplies, audio amplifier, DC motor • 100% Avalanche Tested
control, and variable switching p...