FQA7N80C_F109 — N-Channel QFET®
MOSFET
FQA7N80C_F109
N-Channel QFET®
MOSFET
800 V, 7 A, 1.
9 Ω Features
• 7.
0 A, 800 V, RDS(on) = 1.
9 Ω (Max.
) @ VGS = 10 V, ID = 3.
5 A • Low Gate Charge (Typ.
27nC)
• Low Crss (Typ.
10pF)
• 100% Avalanche Tested
• RoHS Compliant
May 2014
Description
This N-Channel enhancement mode power
MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced
MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, active power factor correction (PFC), and ele...