FQB60N03L
October 2002
FQB60N03L
N-Channel Logic Level PWM Optimized Power
MOSFET
General Description
This device employs a new advanced
MOSFET technology and features low gate charge while maintaining low onresistance.
Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
Features
• Fast switching • rDS(ON) = 0.
010Ω (Typ), VGS = 10V • rDS(ON) = 0.
017Ω (Typ), VGS = 5V • Qg (Typ) = 13nC, VGS = 5V • Qgd (Typ) = 4.
5nC • CISS (Typ) = 1650pF
Applications
• DC/DC converters
DRAIN (FLANGE)
D
GATE SOURCE
G
TO-263AB
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS VGS Para...