FQD5N60C / FQU5N60C N-Channel
MOSFET
March 2013
N-Channel QFET
MOSFET
600 V, 2.
8 A, 2.
5 Ω Description
FQD5N60C / FQU5N60C
Features
• 2.
8 A, 600 V, RDS(on) = 2.
5 Ω (Max) @VGS = 10 V, ID = 1.
4 A • Low Gate Charge (Typ.
15 nC) • Low Crss (Typ.
6.
5 pF) • 100% Avalanche Tested • RoHS compliant
This N-Channel enhancement mode power
MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.
This advanced
MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, active power factor correction (P...