FQB3P20 / FQI3P20
April 2000
QFET
FQB3P20 / FQI3P20
200V P-Channel
MOSFET
General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switching DC/DC converters.
TM
Features
• • • • • • -2.
8A, -200V, RDS(on) = 2.
7Ω @VGS = -10 V Low gate charge ( typical 6.
0 nC) Low Crss ( typical 7.
5 pF) Fast switching 100% avalanche tested Improved dv/dt capabil...