FQP50N06
®
FQP50N06
Pb
Pb Free Plating Product
50A,60V Heatsink Planar N-Channel Power
MOSFET
Features
• 50A, 60V, RDS(on) = 0.
022Ω @VGS = 10 V • Low gate charge ( typical 31 nC) • Low Crss ( typical 65 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating
1.
Gate {
{ 2.
Drain
●
◀▲
● ●
{ 3.
Source
General Description
This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged avalanche characteristics.
The TO-220M pkg is well suited for adaptor ...