FQP8N80/FQPF8N80
800V, 7.
4A N-Channel
MOSFET
General Description
Product Summary
The FQP8N80 & FQPF8N80 have been fabricated using an advanced high
voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V)
100% UIS Tested 100% Rg Tested
TO-220
Top View
TO-220F
900V@150℃ 7.
4A 1.
63Ω
D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
Co...