FQP10N60-FQPF10N60
600V,10A N-Channel
MOSFET
General Description
Product Summary
The FQP10N60 & FQPF10N60 are fabricated using an advanced high
voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V
100% UIS Tested 100% Rg Tested
700V 40A 0.
7Ω 23nC 3.
4µJ
TO-220
Top View
TO-220F
D
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
FQP10N60 FQB10N60
Drain-Source
Voltage...