FQP10N60CF / FQPF10N60CF 600V N-Channel
MOSFET
February 2007
FRFET
FQP10N60CF / FQPF10N60CF
600V N-Channel
MOSFET
Features
• 9A, 600V, RDS(on) = 0.
8Ω @VGS = 10 V • Low gate charge ( typical 44 nC) • Low Crss ( typical 18 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability
TM
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency...