FQP11N40C / FQPF11N40C — N-Channel QFET®
MOSFET
FQP11N40C / FQPF11N40C
N-Channel QFET®
MOSFET
400 V, 10.
5 A, 530 mΩ
November 2013
Features
• 10.
5 A, 400 V, RDS(on) = 530 mΩ (Max.
) @ VGS = 10 V, ID = 5.
25 A
• Low Gate Charge (Typ.
28 nC) • Low Crss (Typ.
85 pF) • 100% Avalanche Tested
Description
This N-Channel enhancement mode power
MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced
MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, active power factor correcti...