FQPF5N80
September 2000
QFET
FQPF5N80
800V N-Channel
MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply.
TM
Features
• • • • • • 2.
8A, 800V, RDS(on) = 2.
6Ω @VGS = 10 V Low gate charge ( typical 25 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability
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