FQP6N40CF/FQPF6N40CF 400V N-Channel
MOSFET
February 2006
FRFET
FQP6N40CF/FQPF6N40CF
400V N-Channel
MOSFET
Features
• 6A, 400V, RDS(on) = 1.
1 Ω @VGS = 10 V • Low gate charge ( typical 16nC) • Low Crss ( typical 15pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Fast recovery body diode (typical 70ns)
TM
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices ar...