FQS4900
August 2000
QFET
FQS4900
Dual N & P-Channel, Logic Level
MOSFET
General Description
These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
This device is well suited for high interface in telephone sets.
TM
Features
• N-Channel 1.
3A, 60V, RDS(on) = 0.
55 Ω @ VGS = 10 V RDS(on) = 0.
65 Ω @ VGS = 5 V P-Channel -0.
3A, -300V, RDS(on) = 15.
5 Ω @ VGS = -10 V RDS(on) = 16 Ω @ VGS =- 5 V • Low gate ch...