IRFR120, IRFU120
Data Sheet January 2002
8.
4A, 100V, 0.
270 Ohm, N-Channel Power
MOSFETs
www.
datasheet4u.
com These are N-Channel enhancement mode silicon gate
Features
• 8.
4A, 100V • rDS(ON) = 0.
270Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
power field effect transistors.
They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
All of these power
MOSFETs are designed for applications suc...