FSB649
FSB649
C E B
SuperSOTTM-3
NPN Low Saturation Transistor
These devices are designed with high current gain and low saturation
voltage with collector currents up to 3A continuous.
Sourced from Process NC.
Absolute Maximum Ratings*
Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter
Voltage Collector-Base
Voltage Emitter-Base
Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
FSB649 25 35 5 3 -55 to +150
Units V V V A °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of...