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FSYC260D

Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs

Description

FSYC260D, FSYC260R July 1998 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR...


Intersil Corporation

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