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Ordering number : ENN7003
FTS1011
P-Channel Silicon
MOSFET
FTS1011
Ultrahigh-Speed Switching Applications
Features
• • •
Package Dimensions
unit : mm 2147A
[FTS1011]
0.
65
0.
95
Low ON-resistance.
2.
5V drive.
Mounting height 1.
1mm.
3.
0
0.
425
8
5
0.
5 4.
5 6.
4
1
0.
25
4
(0.
95)
1 : Drain 2 : Source 3 : Source 0.
125 4 : Gate 5 : Drain 6 : Source 7 : Source 8 : Drain SANYO : TSSOP8
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source
Voltage Gate-to-Source
Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions
0.
1...