Ordering number : EN5305A
P-Channel Silicon
MOSFET
FW103
Ultrahigh-Speed Switching Applications
Features
• Low ON resistance • Ultrahigh-speed switching.
• Composite type with two 4V-drive P-channel
MOSFETs
facilitating high-density mounting.
• Matched pair capability.
Package Dimensions
unit: mm 2129-SOP8
[FW103]
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source
Voltage Gate-to-Source
Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation
VDSS VGSS ID IDP PD
PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.
8mm) 1unit
Total Dissipation
PT Mounted on a ceramic board (1000mm2×0.
8mm)
Channel Temperature...