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G1333

Part Number G1333
Manufacturer GTM
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 17, 2007
Detailed Description www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/03/10 REVISED DATE : G1333 P-CHANNEL ENHANCEMENT MODE PO...
Datasheet G1333





Overview
www.
DataSheet4U.
com Pb Free Plating Product ISSUED DATE :2005/03/10 REVISED DATE : G1333 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -20V 800m -550mA The G1333 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness.
Description *Simple Gate Drive *Small Package Outline *Fast Switching Speed Features Package Dimensions REF.
A B C D E F Millimeter Min.
Max.
2.
70 3.
10 2.
40 2.
80 1.
40 1.
60 0.
35 0.
50 0 0.
10 0.
45 0.
55 REF.
G H K J L M Millimeter Min.
Max.
1.
90 REF.
1.
00 1.
30 0.
10 0.
20 0.
40 0.
85 1.
15 0 10 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Cur...






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