HGTG20N60C3D
Data Sheet January 2000 File Number 4494.
2
45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG20N60C3D is a MOS gated high
voltage switching device combining the best features of
MOSFETs and bipolar transistors.
This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state
voltage drop varies only moderately between 25oC and 150oC.
The IGBT used is development type TA49178.
The diode used in anti-parallel with the IGBT is the RHRP3060 (TA49063).
The IGBT is ideal for many high
voltage switching applications operating at moderate frequencies where low conduction losses are e...