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G2N5551

Part Number G2N5551
Manufacturer GTM
Description NPN EPITAXIAL PLANAR TRANSISTOR
Published Sep 18, 2007
Detailed Description com CORPORATION G2N5551 Description Features NP N E PITAX I AL PLANAR T RANSI STOR ISSUED DATE :2004/0...
Datasheet G2N5551




Overview
com CORPORATION G2N5551 Description Features NP N E PITAX I AL PLANAR T RANSI STOR ISSUED DATE :2004/06/09 REVISED DATE :2004/11/29B The G2N5551 is designed for general purpose switching and amplifier applications.
*Complementary to PNP Type G2N5401 *High Collector – Emitter Breakdown Voltage (VCEO 160V (@IC=1mA) Package Dimensions D E S1 TO-92 A b1 S E A T IN G PLANE REF.
L e1 e b C A S1 b b1 C Millimeter Min.
Max.
4.
45 4.
7 1.
02 0.
36 0.
51 0.
36 0.
76 0.
36 0.
51 REF.
D E L e1 e Millimeter Min.
Max.
4.
44 4.
7 3.
30 3.
81 12.
70 1.
150 1.
390 2.
42 2.
66 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Coll...






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