STGP30M65DF2 Trench gate field-stop IGBT, M series 650 V, 30 A low-loss in a TO-220 package Datasheet - production data TAB TO-220 1 23 Figure 1: Internal schematic diagram Features  6 µs of minimum short-circuit withstand time  VCE(sat) = 1.
55 V (typ.
) @ IC = 30 A  Tight parameters distribution  Safer paralleling  Low thermal resistance  Soft and very fast recovery antiparallel diode Applications  Motor control  UPS  PFC Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.
The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where...

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