HGTG30N60A4D
Data Sheet September 2004
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG30N60A4D is a MOS gated high
voltage switching devices combining the best features of
MOSFETs and bipolar transistors.
This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state
voltage drop varies only moderately between 25oC and 150oC.
The IGBT used is the development type TA49343.
The diode used in anti-parallel is the development type TA49373.
This IGBT is ideal for many high
voltage switching applications operating at high frequencies where low conduction losses are essential.
This device has b...