HGTG30N60B3D
Data Sheet
com
April 2004
60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG30N60B3D is a MOS gated high
voltage switching device combining the best features of
MOSFETs and bipolar transistors.
This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state
voltage drop varies only moderately between 25oC and 150oC.
The IGBT used is the development type TA49170.
The diode used in anti-parallel with the IGBT is the development type TA49053.
The IGBT is ideal for many high
voltage switching applications operating at moderate frequencies where low conduction lo...