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HGTG30N60C3D
Data Sheet January 2000 File Number 4041.
2
63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
The HGTG30N60C3D is a MOS gated high
voltage switching device combining the best features of
MOSFETs and bipolar transistors.
The device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state
voltage drop varies only moderately between 25oC and 150oC.
The IGBT used is the development type TA49051.
The diode used in anti-parallel with the IGBT is the development type TA49053.
The IGBT is ideal for many high
voltage switching applications operating at moderate frequencies wh...