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G30N60HS

Part Number G30N60HS
Manufacturer Infineon
Description High Speed IGBT
Published Mar 4, 2015
Detailed Description SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology • 30% lower Eoff compared to previous generation • Short circu...
Datasheet G30N60HS




Overview
SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution PG-TO-220-3-1 • High ruggedness, temperature stable behaviour • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1 for target applications • Complete product spectrum and PSpice Models : http://www.
infineon.
com/igbt/ C G E PG-TO-247-3 Type VCE IC Eoff) Tj Marking Package SGP30N60HS 600V 30 480µJ 150°C G30N60HS PG-TO-220-3-1 SGW3...






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