Part Number
|
G30N60HS |
Manufacturer
|
Infineon |
Description
|
High Speed IGBT |
Published
|
Mar 4, 2015 |
Detailed Description
|
SGP30N60HS SGW30N60HS
High Speed IGBT in NPT-technology
• 30% lower Eoff compared to previous generation • Short circu...
|
Datasheet
|
G30N60HS
|
Overview
SGP30N60HS SGW30N60HS
High Speed IGBT in NPT-technology
• 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs
• Designed for operation above 30 kHz
• NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution
PG-TO-220-3-1
• High ruggedness, temperature stable behaviour • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1 for target applications • Complete product spectrum and PSpice Models : http://www.
infineon.
com/igbt/
C G
E
PG-TO-247-3
Type
VCE IC Eoff) Tj Marking
Package
SGP30N60HS
600V 30 480µJ 150°C G30N60HS PG-TO-220-3-1
SGW3...
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