Part Number
|
G4BC20UD |
Manufacturer
|
International Rectifier |
Description
|
INSULATED GATE BIPOLAR TRANSISTOR |
Published
|
Apr 8, 2006 |
Detailed Description
|
PD 91449B
IRG4BC20UD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• UltraFast: optimiz...
|
Datasheet
|
G4BC20UD
|
Overview
PD 91449B
IRG4BC20UD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, 200 com kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFRED ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-220AB package
C
UltraFast CoPack IGBT
VCES = 600V
G E
VCE(on) typ.
= 1.
85V
@VGE = 15V, IC = 6.
5A
n-cha nn el
Benefits
• Generation -4 IGBTs offer highest efficiencies available • IGBTs optimized for specific application...
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