PD - 91456E IRG4BC40U INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, 200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package C UltraFast Speed IGBT VCES = 600V G E VCE(on) typ.
= 1.
72V @VGE = 15V, IC = 20A n-channel Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)