com
PD - 91657B
IRG4PC50W
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability
C
VCES = 600V
G E
VCE(on) max.
= 2.
30V
@VGE = 15V, IC = 27A
n-channel
Benefits
• Lower switching losses allow more cost-effective operation than power
MOSFETs up to 150 kHz ("hard switched" mode) • Of particular benefit to single-ended converters a...