Part Number
|
G4PH40UD2-E |
Manufacturer
|
International Rectifier |
Description
|
IRG4PH40UD2-E |
Published
|
Dec 24, 2009 |
Detailed Description
|
PD - 96781
IRG4PH40UD2-E
Features
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
UltraFast Co...
|
Datasheet
|
G4PH40UD2-E
|
Overview
PD - 96781
IRG4PH40UD2-E
Features
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
UltraFast CoPack IGBT
VCES = 1200V
UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recovery anti-parallel diode for use in resonant circuits Industry standard TO-247AD package with extended leads
G E
VCE(on) typ.
= 2.
43V
@VGE = 15V, IC = 21A
Benefits
n-channel
Applications
Higher switching frequency capability than competitive IGBTs Highest efficiency available HEXFRED diodes optimized for performance with IGBTs.
Minimized recovery characteristics require less / no snubbing I...
Similar Datasheet