STGD6M65DF2 Trench gate field-stop IGBT, M series 650 V, 6 A low loss Datasheet - production data Figure 1: Internal schematic diagram Features  6 µs of short-circuit withstand time  VCE(sat) = 1.
55 V (typ.
) @ IC = 6 A  Tight parameter distribution  Safer paralleling  Low thermal resistance  Soft and very fast recovery antiparallel diode Applications  Motor control  UPS  PFC Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.
The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential.
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