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CORPORATION
G8550S
Description Features
PNP EPITAXIAL PLANAR TANSISTOR
ISSUED DATE :2004/04/23 REVISED DATE :2004/11/29B
The G8550S is designed for general purpose amplifier applications.
* High DC Current gain: 100-500 at IC= 150mA *Complementary to G8050S
Package Dimensions
D E S1
TO-92
A
b1 S E A T IN G PLANE
L
REF.
A S1 b b1 C
e1
e
b
C
Millimeter Min.
Max.
4.
45 4.
7 1.
02 0.
36 0.
51 0.
36 0.
76 0.
36 0.
51
REF.
D E L e1 e
Millimeter Min.
Max.
4.
44 4.
7 3.
30 3.
81 12.
70 1.
150 1.
390 2.
42 2.
66
Absolute Maximum Ratings at Ta = 25
Parameter Junction Temperature Storage Temperature Collector to Base
Voltage Collector to Emitter
Voltage Emitter to Base
Voltage Colle...