Part Number
|
GA05JT12-263 |
Manufacturer
|
GeneSiC |
Description
|
Junction Transistor |
Published
|
Apr 14, 2017 |
Detailed Description
|
GA05JT12-263
Normally – OFF Silicon Carbide Junction Transistor
Features
Package
VDS RDS(ON) ID
= 1200 V = 260 mΩ ...
|
Datasheet
|
GA05JT12-263
|
Overview
GA05JT12-263
Normally – OFF Silicon Carbide Junction Transistor
Features
Package
VDS RDS(ON) ID
= 1200 V = 260 mΩ = 5A
175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch Suitable for connecting an anti-parallel diode Positive temperature coefficient for easy paralleling Low gate charge Low intrinsic output capacitance
RoHS Compliant D
DS G
D
G S
TO-263
Advantages
Applications
SiC transistor most compatible with existing Si gate-drivers Low switching losses Higher efficiency High temperature operation High short circuit withstand capability
Absolute Maximum Ratings
Down Hole Oil Drilling, Ge...
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