Non-Isolated Gate Driver
Gate Driver for SiC SJT with Signal Isolation
Features
Requires single 12 V
voltage supply Pin Out compatible with
MOSFET driver boards Multiple internal
voltage level topology for low drive losses Point-of-load (POL), non-isolated design 5000 V Signal Isolation (up to 10 s) Capable of high gate currents with 27 W maximum power RoHS Compliant
Product Image
GA15IDDJT22-FR4
VISO,SIG PDRIVE fmax
= 5000 V = 27 W = 350 kHz
Section I: Introduction
The GA15IDDJT22-FR4 provides an optimized gate drive solution for 10 and 20 mΩ SiC Junction Transistors (SJT).
The board utilizes DC/DC converters and FOD3182 signal opto-isolation as well as totem-pole gate d...