Silicon Carbide Power Schottky Diode
Features
8000 V Silicon Carbide Schottky rectifier 175 °C maximum operating temperature Positive temperature coefficient of VF Extremely fast switching speeds Superior figure of merit QC/IF
Advantages
Improved circuit efficiency (Lower overall cost) Low switching losses Ease of paralleling devices without thermal runaway Smaller heat sink requirements Low reverse recovery current Low device capacitance Low reverse leakage current at operating temperature
Die Datasheet
GAP05SLT80-CAL
VRRM IF QC
= 8000 V = 50 mA = 8 nC
Die Size = 2.
4 mm x 2.
4 mm
Applications
Down Hole Oil Drilling, Geothermal Instrumentation High
Voltage Mul...