Part Number
|
GB01SHT06-CAL |
Manufacturer
|
GeneSiC |
Description
|
High Temperature Silicon Carbide Power Schottky Diode |
Published
|
Jun 25, 2016 |
Detailed Description
|
High Temperature Silicon Carbide Power Schottky Diode
Features
650 V Schottky rectifier 210 °C maximum operating t...
|
Datasheet
|
GB01SHT06-CAL
|
Overview
High Temperature Silicon Carbide Power Schottky Diode
Features
650 V Schottky rectifier 210 °C maximum operating temperature Zero reverse recovery charge Superior surge current capability Positive temperature coefficient of VF Temperature independent switching behavior Lowest figure of merit QC/IF Available screened to Mil-PRF-19500
Die Datasheet
GB01SHT06-CAL
VRRM IF @ 25 oC
QC
= 650 V = 2.
5 A = 7 nC
Die Size = 0.
9 mm x 0.
9 mm
Advantages
High temperature operation Improved circuit efficiency (Lower overall cost) Low switching losses Ease of paralleling devices without thermal runaway Smaller heat sink requirements Industry’s lowest reverse recovery c...
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