Part Number
|
GB6B60KD |
Manufacturer
|
International Rectifier |
Description
|
IRGB6B60KD |
Published
|
Dec 17, 2009 |
Detailed Description
|
www.DataSheet4U.com
PD - 94381E
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
IRGB6B60KD IRG...
|
Datasheet
|
GB6B60KD
|
Overview
www.
DataSheet4U.
com
PD - 94381E
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
IRGB6B60KD IRGS6B60KD IRGSL6B60KD
VCES = 600V IC = 7.
0A, TC=100°C
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
G E
tsc 10µs, TJ=150°C
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
n-channel
VCE(on) typ.
= 1.
8V
TO-220AB IRGB6B60KD
D2Pak IRGS6B60KD Max.
600 13 7.
0 26 26 13 7.
0 26 ± 20 90 36 -55 to +150
TO-262...
Similar Datasheet