GF4410
N-Channel Enhancement-Mode
MOSFET
H C N T E TRE NF E G
SO-8
0.
197 (5.
00) 0.
189 (4.
80)
VDS 30V RDS(ON) 13.
5mΩ ID 10A
®
com
8 5 0.
157 (3.
99) 0.
150 (3.
81) 0.
244 (6.
20) 0.
228 (5.
79) 1 4
Dimensions in inches and (millimeters)
0.
019 (0.
48) x 45 ° 0.
010 (0.
25)
0.
05 (1.
27) 0.
04 (1.
02) 0.
245 (6.
22) Min.
0.
009 (0.
23) 0.
007 (0.
18)
0.
165 (4.
19) 0.
155 (3.
94)
0.
050 (1.
27)
0.
020 (0.
51) 0.
013 (0.
33) 0.
069 (1.
75) 0.
053 (1.
35) 0.
009 (0.
23) 0.
004 (0.
10)
0.
035 (0.
889) 0.
025 (0.
635)
0 °– 8 ° 0.
050(1.
27) 0.
016 (0.
41)
0.
050 typ.
(1.
27)
Mounting Pad Layout
Mechanical Data
Case: SO-8 molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 High temperature sold...