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ISSUED DATE :2005/08/31 REVISED DATE :2005/11/28B
GI3669
Description Package Dimensions
NPN EPITAXIAL PLANAR T RANSISTOR
The GI3669 is designed for using in power amplifier applications, power switching applications.
TO-251
REF.
A B C D E F
Millimeter Min.
Max.
6.
40 6.
80 5.
20 5.
50 6.
80 7.
20 7.
20 7.
80 2.
30 REF.
0.
60 0.
90
REF.
G H J K L M
Millimeter Min.
Max.
0.
50 0.
70 2.
20 2.
40 0.
45 0.
55 0.
45 0.
60 0.
90 1.
50 5.
40 5.
80
Absolute Maximum Ratings (TA=25 )
Parameter Collector to Base
Voltage Collector to Emitter
Voltage Emitter to Base
Voltage Collector Current (DC) Total Device Dissipation (TA=25 ) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ...