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ISSUED DATE :2005/07/15 REVISED DATE :
GJ4672
Description Features
NPN EPITAXIAL SILICON TRANSISTOR
The GJ4672 is designed for low frequency amplifier applications.
Low saturation
voltage, typically VCE(sat) =0.
1V at IC/IB=1A/50mA Excellent DC current gain characteristics
Package Dimensions
TO-252
REF.
A B C D E F S
Millimeter Min.
Max.
6.
40 6.
80 5.
20 5.
50 6.
80 7.
20 2.
40 3.
00 2.
30 REF.
0.
70 0.
90 0.
60 0.
90
REF.
G H J K L M R
Millimeter Min.
Max.
0.
50 0.
70 2.
20 2.
40 0.
45 0.
55 0 0.
15 0.
90 1.
50 5.
40 5.
80 0.
80 1.
20
Absolute Maximum Ratings (TA=25 )
Parameter Collector to Base
Voltage Collector to Emitter
Voltage Emitter to Base
Voltage Collector Current (DC) Collecto...