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ISSUED DATE :2005/05/06 REVISED DATE :
GJ5706
Description Features
NPN EPITAXIAL PLANAR SILICON TRANSISTOR
The GJ5706 is designed high current switching applications.
*Large current capacitance *Low collector-to-emitter saturation
voltage *High-speed switching *High allowable power dissipation
Package Dimensions TO-252
REF.
A B C D E F S
Millimeter Min.
Max.
6.
40 6.
80 5.
20 5.
50 6.
80 7.
20 2.
40 3.
00 2.
30 REF.
0.
70 0.
90 0.
60 0.
90
REF.
G H J K L M R
Millimeter Min.
Max.
0.
50 0.
70 2.
20 2.
40 0.
45 0.
55 0 0.
15 0.
90 1.
50 5.
40 5.
80 0.
80 1.
20
Absolute Maximum Ratings (Ta = 25
Parameter Collector to Base
Voltage Collector to Emitter
Voltage Collector to Emitter
Voltage Emitt...