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CORPORATION
G M 11 8 8
Description Features
PNP SILICON EPITAXIAL TRANSISTOR The GM1188 is designed for medium power amplifier applications.
Low collector saturation
voltage : VCE(sat)=-0.
5V(Typ.
) Complementary pair with GM1766
ISSUED DATE :2005/07/19 REVISED DATE :2005/10/19B
Package Dimensions
SOT-89
REF.
A B C D E F
Millimeter Min.
Max.
4.
4 4.
6 4.
05 4.
25 1.
50 1.
70 1.
30 1.
50 2.
40 2.
60 0.
89 1.
20
REF.
G H I J K L M
Millimeter Min.
Max.
3.
00 REF.
1.
50 REF.
0.
40 0.
52 1.
40 1.
60 0.
35 0.
41 5 TYP.
0.
70 REF.
Absolute Maximum Ratings at Ta = 25
Parameter Junction Temperature Storage Temperature Collector to Base
Voltage Collector to Emitter
Voltage Emitter to Base Voltag...